Skip to content

Determination of the self-compensation ratio of carbon in AlGaN for HEMTs

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1838-1842
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume65
Issue number5
Early online date27 Mar 2018
DOIs
DateAccepted/In press - 26 Feb 2018
DateE-pub ahead of print - 27 Mar 2018
DatePublished (current) - 1 May 2018

Abstract

Epitaxial AlGaN/GaN/AlGaN-on-Si high-electron mobility structures with and without carbon doping have been studied. By considering the donor density required to suppress a 2D hole gas in the undoped structure, we demonstrate that the $2 \times 10^{19}$ cm-3 substitutional carbon incorporated during metal-organic chemical vapor deposition must be a source of donors as well as acceptors, with a donor to acceptor ratio of at least 0.4. This compensation ratio was determined based on the comparison of substrate bias experiments with TCAD simulations. This value, which was previously unknown, is a key parameter in GaN power switching high- electron- mobility transistors, since it determines the resistivity of the layer used to suppress leakage and increase breakdown voltage.

    Structured keywords

  • CDTR

    Research areas

  • 2D hole gas (2DHG), AlGaN, Carbon, Compensation, GaN, Self-compensation

Download statistics

No data available

Documents

Documents

  • Full-text PDF (final published version)

    Rights statement: This is the final published version of the article (version of record). It first appeared online via IEEE at https://doi.org/10.1109/TED.2018.2813542 . Please refer to any applicable terms of use of the publisher.

    Final published version, 2 MB, PDF-document

    Licence: CC BY

DOI

View research connections

Related faculties, schools or groups