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Epitaxial UN and α-U2N3 thin films

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)71-77
Number of pages7
JournalThin Solid Films
Early online date17 Jul 2018
DateAccepted/In press - 13 Jul 2018
DateE-pub ahead of print - 17 Jul 2018
DatePublished (current) - 1 Sep 2018


Single crystal epitaxial thin films of UN and α-U2N3 have been grown for the first time by reactive DC magnetron sputtering. These films provide ideal samples for fundamental research into the potential accident tolerant fuel, UN, and U2N3, its intermediate oxidation product. Films were characterised using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS), with XRD analysis showing both thin films to be [001] oriented and composed of a single domain. The specular lattice parameters of the UN and U2N3 films were found to be 4.895 Å and 10.72 Å respectively, with the UN film having a miscut of 2.6°. XPS showed significant differences in the N-1 s peak between the two films, with area analysis showing both films to be stoichiometric.

Additional information

7 pages, 11 figures

    Research areas

  • Epitaxial growth, Uranium nitride, X-ray diffraction, X-ray photoelectron spectroscopy



  • Full-text PDF (accepted author manuscript)

    Rights statement: This is the accepted author manuscript (AAM). The final published version (version of record) is available online via Elsevier at DOI: 10.1016/j.tsf.2018.07.018. Please refer to any applicable terms of use of the publisher.

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    Embargo ends: 17/07/19

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