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First cryogenic electro-optic switch on silicon with high bandwidth and low power tunability

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting (IEDM)
Publisher or commissioning bodyInstitute of Electrical and Electronics Engineers (IEEE)
Pages23.1. 1-23.1. 4
Number of pages4
ISBN (Electronic)9781728119878
DateAccepted/In press - 10 Sep 2018
DatePublished (current) - 16 Jan 2019
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 1 Dec 20185 Dec 2018

Publication series

NameIEEE International Electron Devices Meeting (IEDM)
ISSN (Print)0163-1918


Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
CountryUnited States
CitySan Francisco


We demonstrate the first electro-optic switch operating at cryogenic temperatures of 4 K with a high electrooptic bandwidth of > 18 GHz. Our novel technology exploits the Pockels effect in barium titanate thin films co-integrated with silicon photonics and offers low losses, pure phase modulation, and sub-pW electro-optic tuning.


64th Annual IEEE International Electron Devices Meeting, IEDM 2018

Duration1 Dec 20185 Dec 2018
CitySan Francisco
CountryUnited States
SponsorsIEEE Electron Devices Society (External organisation)

Event: Conference

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