Skip to content

First cryogenic electro-optic switch on silicon with high bandwidth and low power tunability

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting (IEDM)
Publisher or commissioning bodyInstitute of Electrical and Electronics Engineers (IEEE)
Pages23.1. 1-23.1. 4
Number of pages4
Volume2018-December
ISBN (Electronic)9781728119878
DOIs
DateAccepted/In press - 10 Sep 2018
DatePublished (current) - 16 Jan 2019
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 1 Dec 20185 Dec 2018

Publication series

NameIEEE International Electron Devices Meeting (IEDM)
PublisherIEEE
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
CountryUnited States
CitySan Francisco
Period1/12/185/12/18

Abstract

We demonstrate the first electro-optic switch operating at cryogenic temperatures of 4 K with a high electrooptic bandwidth of > 18 GHz. Our novel technology exploits the Pockels effect in barium titanate thin films co-integrated with silicon photonics and offers low losses, pure phase modulation, and sub-pW electro-optic tuning.

Event

64th Annual IEEE International Electron Devices Meeting, IEDM 2018

Duration1 Dec 20185 Dec 2018
CitySan Francisco
CountryUnited States
SponsorsIEEE Electron Devices Society (External organisation)

Event: Conference

Download statistics

No data available

Documents

Documents

  • Full-text PDF (accepted author manuscript)

    Rights statement: This is the accepted author manuscript (AAM). The final published version (version of record) is available online via IEEE at https://doi.org/10.1109/IEDM.2018.8614511 . Please refer to any applicable terms of use of the publisher.

    Accepted author manuscript, 1 MB, PDF document

    Licence: Other

DOI

View research connections

Related faculties, schools or groups