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Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1572-1575
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number10
Early online date16 Aug 2018
DOIs
DateAccepted/In press - 1 Aug 2018
DateE-pub ahead of print - 16 Aug 2018
DatePublished (current) - Oct 2018

Abstract

Comparison between pulsed and CW large signal RF performance of field-plated β -Ga 2 O 3 MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2- μm gate length device. Increased power dissipation for higher VDS and IDS resulted in a degradation in performance, which, thermal simulation showed, could be entirely explained by self-heating. Buffer and surface trapping contributions have been evaluated using gate and drain lag measurements, showing minimal impact on device performance. These results suggest that β -Ga 2 O 3 is a good candidate for future RF applications.

    Structured keywords

  • CDTR

    Research areas

  • Ga2O3 MOSFET, large signal RF, power added efficiency (PAE), pulsed IV, pulsed RF

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    Rights statement: This is the final published version of the article (version of record). It first appeared online via IEEE at https://doi.org/10.1109/LED.2018.2865832 . Please refer to any applicable terms of use of the publisher.

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    Licence: CC BY

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