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Theory and design of InxGa1-xAs1-yBiy mid-infrared semiconductor lasers: Type-I quantum wells for emission beyond 3 μm on InP substrates

Research output: Contribution to journalArticle

  • Christopher Broderick
  • Wanshu Xiong
  • Stephen J. Sweeney
  • Eoin P. O'reilly
  • Judy M Rorison
Original languageEnglish
Article number094007
Number of pages17
JournalSemiconductor Science and Technology
Volume33
Issue number9
Early online date7 Aug 2018
DOIs
DateAccepted/In press - 11 Jul 2018
DateE-pub ahead of print - 7 Aug 2018
DatePublished (current) - Sep 2018

Abstract

We present a theoretical analysis and optimisation of the properties and performance of mid-infrared semiconductor lasers based on the dilute bismide alloy InxGa1-xAs1-yBiy, grown on conventional (001) InP substrates. The ability to independently vary the epitaxial strain and emission wavelength in this quaternary alloy provides significant scope for band structure engineering. Our calculations demonstrate that structures based on compressively strained InxGa1-xAs1-yBiy quantum wells (QWs) can readily achieve emission wavelengths in the 3-5 μm range, and that these QWs have large type-I band offsets. As such, these structures have the potential to overcome a number of limitations commonly associated with this application-rich but technologically challenging wavelength range. By considering laser structures having (i) fixed QW thickness and variable strain, and (ii) fixed strain and variable QW thickness, we quantify key trends in the properties and performance as functions of the alloy composition, structural properties, and emission wavelength, and on this basis identify routes towards the realisation of optimised devices for practical applications. Our analysis suggests that simple laser structures - incorporating compressively strained InxGa1-xAs1-yBiy QWs and unstrained ternary In0.53Ga0.47As barriers - which are compatible with established epitaxial growth, provide a promising route to realising InP-based mid-infrared diode lasers.

    Research areas

  • dilute bismide alloy, mid-infrared, semiconductor laser, theoretical modelling

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  • Full-text PDF (accepted author manuscript)

    Rights statement: This is the author accepted manuscript (AAM). The final published version (version of record) is available online via IOP at http://iopscience.iop.org/article/10.1088/1361-6641/aad2bd/meta . Please refer to any applicable terms of use of the publisher.

    Accepted author manuscript, 837 KB, PDF document

    Licence: CC BY-NC-ND

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